

A team of electrical engineers is turning sand into the next generation of semiconductors by focusing their research on silicon carbide technology.
Commonly found in sand, silicon is the basic material for semiconductors. Adding carbon to silicon results in a superior product.
"The bonds between silicon and carbon are much stronger than the bonds between silicon and other additives," said associate professor Mike Mazzola. "The result is a material that is outstanding for high temperature, high voltage and high frequency applications."
Silicon carbide semiconductors can cost up to 1,000 times more than the garden variety silicon devices, but they are much more reliable. And, since one silicon carbide chip can replace several silicon devices in high temperature applications, costs may actually decline. Silicon carbide semiconductors can work at temperatures of more than 600 degrees Celsius, compared to only about 125 degrees for those made only with silicon.
Working with Mazzola and Stephen Saddow, director of the Emerging Materials Research Laboratory, is assistant professor Ben Blalock, who is investigating various silicon carbide chip designs at the National Science Foundation Engineering Research Center.
The university's expertise in silicon carbide research led to a partnership with the General Electric Corp.

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